Part Number List of NSN 5961-00-478-7655, 5961004787655 - Transistor
The NSN part number 5961-00-478-7655 manufactured by Ballantine Laboratories Inc, Devonport Royal Dockyard Ltd, Union Carbide Corp, Solitron Devices Inc is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts 10100000A, 10100060A, SR1888 10, UC734, UC734E. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5961-00-478-7655 part of Transistor we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5961-00-478-7655 |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004787655 |
| NCB Code: USA (00) |
| Manufacturers: Ballantine Laboratories Inc, Devonport Royal Dockyard Ltd, Solitron Devices Inc, Union Carbide Corp |
Part Number's List for NSN 5961-00-478-7655, 5961004787655
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 10100000A | ballantine laboratories inc | transistor | Avl | RFQ |
| 10100060A | ballantine laboratories inc | transistor | Avl | RFQ |
| SR1888 10 | devonport royal dockyard ltd | transistor | Avl | RFQ |
| UC734 | union carbide corp | transistor | Avl | RFQ |
| UC734E | union carbide corp | transistor | Avl | RFQ |
| VC734 | solitron devices inc | transistor | Avl | RFQ |
Product Characteristics of NSN 5961004787655
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-72 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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