Part Number List of NSN 5961-01-326-7680, 5961013267680 - Transistor
The NSN part number 5961-01-326-7680 manufactured by Hewlett Packard Inc, Keysight Technologies Inc, Gdi Simulation, Freescale Semiconductor Inc, On Semiconductor Corporation is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts 1855-0555, 1855-0555, 74197, VN0300L, VN0300L. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5961-01-326-7680 part of Transistor we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5961-01-326-7680 |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013267680 |
| NCB Code: USA (01) |
| Manufacturers: Freescale Semiconductor Inc, Gdi Simulation, Hewlett Packard Inc, Keysight Technologies Inc, On Semiconductor Corporation, Siliconix Ltd |
Part Number's List for NSN 5961-01-326-7680, 5961013267680
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1855-0555 | hewlett packard inc | transistor | Avl | RFQ |
| 1855-0555 | keysight technologies inc | transistor | Avl | RFQ |
| 74197 | gdi simulation | transistor | Avl | RFQ |
| VN0300L | freescale semiconductor inc | transistor | Avl | RFQ |
| VN0300L | on semiconductor corporation | transistor | Avl | RFQ |
| VN0300L | siliconix ltd | transistor | Avl | RFQ |
Product Characteristics of NSN 5961013267680
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 100.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
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