The NSN part number 5962-01-309-3417 manufactured by Integrated Device Technology Inc, Raytheon Company, Cypress Semiconductor Inc, 2 Mb Distribution, Thales Sa is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts IDT6168SA45DB, G382307-103, CY7C168-45DMB, CY7C168-45DMB, 99142756. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-309-3417 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
Alternative NSN: 5962-01-309-3417 |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013093417 |
NCB Code: USA (01) |
Manufacturers: 2 Mb Distribution, Cypress Semiconductor Inc, Integrated Device Technology Inc, Raytheon Company, Thales Sa |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
IDT6168SA45DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
G382307-103 | raytheon company | microcircuit memory | Avl | RFQ |
CY7C168-45DMB | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
CY7C168-45DMB | 2 mb distribution | microcircuit memory | Avl | RFQ |
99142756 | thales sa | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.930 INCHES MINIMUM AND 0.970 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 385.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND W/ENABLE AND STATIC OPERATION |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
AGAV | END ITEM IDENTIFICATION | 4920-01-187-4068 TEST SYSTEM,AUT |
CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
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