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Part Number List of NSN 5962-01-309-3417, 5962013093417 - Microcircuit Memory


The NSN part number 5962-01-309-3417 manufactured by Integrated Device Technology Inc, Raytheon Company, Cypress Semiconductor Inc, 2 Mb Distribution, Thales Sa is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts IDT6168SA45DB, G382307-103, CY7C168-45DMB, CY7C168-45DMB, 99142756. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-309-3417 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.

Alternative NSN: 5962-01-309-3417
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 013093417
NCB Code: USA (01)
Manufacturers: 2 Mb Distribution, Cypress Semiconductor Inc, Integrated Device Technology Inc, Raytheon Company, Thales Sa

Part Number's List for NSN 5962-01-309-3417, 5962013093417

Part No Manufacturer Item Name QTY RFQ
IDT6168SA45DB integrated device technology inc microcircuit memory Avl RFQ
G382307-103 raytheon company microcircuit memory Avl RFQ
CY7C168-45DMB cypress semiconductor inc microcircuit memory Avl RFQ
CY7C168-45DMB 2 mb distribution microcircuit memory Avl RFQ
99142756 thales sa microcircuit memory Avl RFQ

Product Characteristics of NSN 5962013093417

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.930 INCHES MINIMUM AND 0.970 INCHES MAXIMUM
ADATBODY WIDTH0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
ADAUBODY HEIGHT0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING385.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND W/ENABLE AND STATIC OPERATION
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPERAM
CZZZMEMORY CAPACITYUNKNOWN
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
TTQYTERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510
AGAVEND ITEM IDENTIFICATION4920-01-187-4068 TEST SYSTEM,AUT
CQZPINPUT CIRCUIT PATTERN18 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER

Browse Relevant NSN for 5962-01-309-3417, 5962013093417



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