Part Number List of NSN 5961-00-007-9099, 5961000079099 - Transistor
The NSN part number 5961-00-007-9099 manufactured by T M Systems Inc is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts 2N5416, TDP1004. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5961-00-007-9099 part of Transistor we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5961-00-007-9099 |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 000079099 |
| NCB Code: USA (00) |
| Manufacturers: T M Systems Inc |
Part Number's List for NSN 5961-00-007-9099, 5961000079099
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 2N5416 | t m systems inc | transistor | Avl | RFQ |
| TDP1004 | t m systems inc | transistor | Avl | RFQ |
Product Characteristics of NSN 5961000079099
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL" |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM" |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM" |
| ADAV | OVERALL DIAMETER | 0.340 INCHES MINIMUM AND 0.370 INCHES MAXIMUM" |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT" |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5" |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE" |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINIMUM AND 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM" |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM" |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP" |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD" |
| ABBH | INCLOSURE MATERIAL | METAL" |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM" |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM" |
| ADAV | OVERALL DIAMETER | 0.340 INCHES MINIMUM AND 0.370 INCHES MAXIMUM" |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT" |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5" |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE" |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINIMUM AND 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM" |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM" |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP" |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD" |
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