Part Number List of NSN 5962-01-011-2032, 5962010112032 - Microcircuit Memory
The NSN part number 5962-01-011-2032 manufactured by General Dynamics Corporation, Motorola Ltd, Intersil Inc, Mmi Amd, Dla Land And Maritime is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts 51-P01508E108A, 51-P01508E108A, HM1-7610-8, HPROM1-1024A-8, IM5603AMDE. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-011-2032 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5962-01-011-2032 |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010112032 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime, General Dynamics Corporation, Intersil Inc, Mmi Amd, Motorola Ltd |
Part Number's List for NSN 5962-01-011-2032, 5962010112032
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 51-P01508E108A | general dynamics corporation | microcircuit memory | Avl | RFQ |
| 51-P01508E108A | motorola ltd | microcircuit memory | Avl | RFQ |
| HM1-7610-8 | intersil inc | microcircuit memory | Avl | RFQ |
| HPROM1-1024A-8 | intersil inc | microcircuit memory | Avl | RFQ |
| IM5603AMDE | intersil inc | microcircuit memory | Avl | RFQ |
| MM5300J | mmi amd | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 021 | dla land and maritime | microcircuit memory | Avl | RFQ |
Product Characteristics of NSN 5962010112032
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND HIGH SPEED AND W/OPEN COLLECTOR |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 94990-51-+01508E DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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