Part Number List of NSN 5962-01-096-2197, 5962010962197 - Microcircuit Memory
The NSN part number 5962-01-096-2197 manufactured by Intel Corporation, Honeywell International Inc, Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems, Computer Automation Inc is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts MD2125AL B, 8001471-425, 6011016-002, 2125AL-2, 01-50018-00. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-096-2197 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5962-01-096-2197 |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010962197 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems, Computer Automation Inc, Honeywell International Inc, Intel Corporation |
Part Number's List for NSN 5962-01-096-2197, 5962010962197
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| MD2125AL B | intel corporation | microcircuit memory | Avl | RFQ |
| 8001471-425 | honeywell international inc | microcircuit memory | Avl | RFQ |
| 6011016-002 | bae systems information and electronic systems integration inc div bae systems | microcircuit memory | Avl | RFQ |
| 2125AL-2 | intel corporation | microcircuit memory | Avl | RFQ |
| 01-50018-00 | computer automation inc | microcircuit memory | Avl | RFQ |
Product Characteristics of NSN 5962010962197
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.790 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 413.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND HIGH SPEED AND W/DECODED OUTPUT AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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