The NSN part number 5962-01-102-9768 manufactured by Motorola Ltd, Intersil Inc, Advanced Micro Devices Inc, Ogden Air Logistics Center, Racal Instruments Wireless Solutions is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts MCM 2114P-20, IM7114L2CJN, AM9114EPC, AM9114CPCB, 8066500-001. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-102-9768 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
Alternative NSN: 5962-01-102-9768 |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011029768 |
NCB Code: USA (01) |
Manufacturers: Advanced Micro Devices Inc, Intersil Inc, Motorola Ltd, Ogden Air Logistics Center, Racal Instruments Wireless Solutions |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
MCM 2114P-20 | motorola ltd | microcircuit memory | Avl | RFQ |
IM7114L2CJN | intersil inc | microcircuit memory | Avl | RFQ |
AM9114EPC | advanced micro devices inc | microcircuit memory | Avl | RFQ |
AM9114CPCB | advanced micro devices inc | microcircuit memory | Avl | RFQ |
8066500-001 | ogden air logistics center | microcircuit memory | Avl | RFQ |
31-9005 | racal instruments wireless solutions | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 900 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 260 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 180 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING265 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDSTATIC OPERATION |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
MEMORY | CRHL | BIT QUANTITY4096 |
MEMORY | CSWJ | WORD QUANTITY1024 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC200 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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