Part Number List of NSN 5962-01-178-4389, 5962011784389 - Microcircuit Memory
The NSN part number 5962-01-178-4389 manufactured by Intersil Inc, L3 Services Llc, Titan Corporation, Bae Systems Controls Inc, Raytheon Company is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts HM1-6508-8, 985115-508, 985115-508, 636710-03, 2352213-1. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-178-4389 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5962-01-178-4389 |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011784389 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Controls Inc, Hewlett Packard Inc, Intersil Inc, L3 Services Llc, Raytheon Company, Thales Uk Limited, Titan Corporation |
Part Number's List for NSN 5962-01-178-4389, 5962011784389
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| HM1-6508-8 | intersil inc | microcircuit memory | Avl | RFQ |
| 985115-508 | l3 services llc | microcircuit memory | Avl | RFQ |
| 985115-508 | titan corporation | microcircuit memory | Avl | RFQ |
| 636710-03 | bae systems controls inc | microcircuit memory | Avl | RFQ |
| 2352213-1 | raytheon company | microcircuit memory | Avl | RFQ |
| 1866052 | thales uk limited | microcircuit memory | Avl | RFQ |
| 1818-0390 | hewlett packard inc | microcircuit memory | Avl | RFQ |
Product Characteristics of NSN 5962011784389
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES NOMINAL |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND HIGH PERFORMANCE AND LOW POWER AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 8.3 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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