Part Number List of NSN 5962-01-186-5712, 5962011865712 - Microcircuit Memory
The NSN part number 5962-01-186-5712 manufactured by Intel Corporation, Dla Land And Maritime, Philips Semiconductors Ltd, Advanced Micro Devices Inc, Bae Systems Controls Inc is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts S8337, ROM PROM FAMILY 051, CC4497, 7138DPAH, 299A9982P466. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-186-5712 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5962-01-186-5712 |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011865712 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc, Bae Systems Controls Inc, Dla Land And Maritime, Intel Corporation, Philips Semiconductors Ltd |
Part Number's List for NSN 5962-01-186-5712, 5962011865712
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| S8337 | intel corporation | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 051 | dla land and maritime | microcircuit memory | Avl | RFQ |
| CC4497 | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
| 7138DPAH | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| 299A9982P466 | bae systems controls inc | microcircuit memory | Avl | RFQ |
| 144A9552P6 | bae systems controls inc | microcircuit memory | Avl | RFQ |
Product Characteristics of NSN 5962011865712
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMABLE AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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