Part Number List of NSN 5962-01-227-8417, 5962012278417 - Microcircuit Memory
The NSN part number 5962-01-227-8417 manufactured by Toshiba Corp, Sharp Electronics Corporation, Hitachi Ltd, Intersil Inc, Peak Ryzex Inc is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts TC5565P-15, LH5268A-10LL, HM6264P-15, HM6264P 15, HM6264AP-15. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-227-8417 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5962-01-227-8417 |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012278417 |
| NCB Code: USA (01) |
| Manufacturers: Hitachi Ltd, Intersil Inc, Peak Ryzex Inc, Sharp Electronics Corporation, Toshiba Corp |
Part Number's List for NSN 5962-01-227-8417, 5962012278417
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| TC5565P-15 | toshiba corp | microcircuit memory | Avl | RFQ |
| LH5268A-10LL | sharp electronics corporation | microcircuit memory | Avl | RFQ |
| HM6264P-15 | hitachi ltd | microcircuit memory | Avl | RFQ |
| HM6264P 15 | intersil inc | microcircuit memory | Avl | RFQ |
| HM6264AP-15 | hitachi ltd | microcircuit memory | Avl | RFQ |
| 107883-001 | peak ryzex inc | microcircuit memory | Avl | RFQ |
Product Characteristics of NSN 5962012278417
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH36 0 MILLIMETERS NOMINAL |
| MEMORY | ADAT | BODY WIDTH13 4 MILLIMETERS NOMINAL |
| MEMORY | ADAU | BODY HEIGHT5 2 MILLIMETERS NOMINAL |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-10 0 TO 85 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHIGH SPEED AND LOW POWER AND STATIC OPERATION |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN21 INPUT |
| MEMORY | CRHL | BIT QUANTITY65536 |
| MEMORY | CSWJ | WORD QUANTITY8192 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
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