Part Number List of NSN 5962-01-247-1256, 5962012471256 - Microcircuit Memory
The NSN part number 5962-01-247-1256 manufactured by Lansdale Semiconductor Inc, Philips Semiconductors Ltd, Dla Land And Maritime, Freescale Semiconductor Inc is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts SL82S181ABJA, S82S181AF, ROM PROM HEAD 165, 82S181A BJA, 7681BJXJC. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-247-1256 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5962-01-247-1256 |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012471256 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime, Freescale Semiconductor Inc, Lansdale Semiconductor Inc, Philips Semiconductors Ltd |
Part Number's List for NSN 5962-01-247-1256, 5962012471256
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| SL82S181ABJA | lansdale semiconductor inc | microcircuit memory | Avl | RFQ |
| S82S181AF | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
| ROM PROM HEAD 165 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82S181A BJA | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
| 7681BJXJC | freescale semiconductor inc | microcircuit memory | Avl | RFQ |
Product Characteristics of NSN 5962012471256
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.560 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.170 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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