Part Number List of NSN 5962-01-267-7974, 5962012677974 - Microcircuit Memory
The NSN part number 5962-01-267-7974 manufactured by Cardion Inc, Target Inc, Mc Donnell Douglas Corp, Integrated Device Technology Inc, Anacomp Corp is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts 410180, 410180, B77T0543-0623, IDT6116LA150TB, IDT6116LA150TDB. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-267-7974 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5962-01-267-7974 |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012677974 |
| NCB Code: USA (01) |
| Manufacturers: Anacomp Corp, Cardion Inc, Integrated Device Technology Inc, Mc Donnell Douglas Corp, Target Inc |
Part Number's List for NSN 5962-01-267-7974, 5962012677974
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 410180 | cardion inc | microcircuit memory | Avl | RFQ |
| 410180 | target inc | microcircuit memory | Avl | RFQ |
| B77T0543-0623 | mc donnell douglas corp | microcircuit memory | Avl | RFQ |
| IDT6116LA150TB | integrated device technology inc | microcircuit memory | Avl | RFQ |
| IDT6116LA150TDB | integrated device technology inc | microcircuit memory | Avl | RFQ |
| MKB6116L-15 | anacomp corp | microcircuit memory | Avl | RFQ |
Product Characteristics of NSN 5962012677974
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.280 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND BIDIRECTIONAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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