The NSN part number 5962-01-292-9209 manufactured by Texas Instruments Incorporated, Dla Land And Maritime, University Of Texas At Austin, National Semiconductor Corp, Advanced Micro Devices Inc is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts SNC54S472J, ROM PROM HEAD 016, ED1363-001, DM54S472J 883, AM27S29DMB. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-292-9209 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
Alternative NSN: 5962-01-292-9209 |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012929209 |
NCB Code: USA (01) |
Manufacturers: Advanced Micro Devices Inc, Dla Land And Maritime, National Semiconductor Corp, Raytheon Company, Texas Instruments Incorporated, University Of Texas At Austin |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
SNC54S472J | texas instruments incorporated | microcircuit memory | Avl | RFQ |
ROM PROM HEAD 016 | dla land and maritime | microcircuit memory | Avl | RFQ |
ED1363-001 | university of texas at austin | microcircuit memory | Avl | RFQ |
DM54S472J 883 | national semiconductor corp | microcircuit memory | Avl | RFQ |
AM27S29DMB | advanced micro devices inc | microcircuit memory | Avl | RFQ |
AM27S29DC | advanced micro devices inc | microcircuit memory | Avl | RFQ |
AM27S29A BRA | advanced micro devices inc | microcircuit memory | Avl | RFQ |
72-00745-107 | raytheon company | microcircuit memory | Avl | RFQ |
5962-8769002RX | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-8769002RB | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-8769002RA | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-87690 | dla land and maritime | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 880.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | -30.00 MILLIAMPERES MINIMUM INPUT AND 5.00 MILLIAMPERES MAXIMUM INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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