The NSN part number 5962-01-305-3711 manufactured by Bae Systems Operations Limited Dba Bae Systems Plc, Dla Land And Maritime is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts 9976-CCTF, 8411102YA. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-305-3711 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
Alternative NSN: 5962-01-305-3711 |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013053711 |
NCB Code: USA (01) |
Manufacturers: Bae Systems Operations Limited Dba Bae Systems Plc, Dla Land And Maritime |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
9976-CCTF | bae systems operations limited dba bae systems plc | microcircuit memory | Avl | RFQ |
8411102YA | dla land and maritime | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 060 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-10 MIL-M-38510 |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | ADAT | BODY WIDTH0 310 INCHES MAXIMUM |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
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