Part Number List of NSN 5962-01-359-0333, 5962013590333 - Microcircuit Memory
The NSN part number 5962-01-359-0333 manufactured by Bae Systems Information And Electronic Systems Integration I, Cypress Semiconductor Inc, Performance Semiconductor Corp, Pyramid Semiconductor Corp is available in NSN Components’ inventory. Owned and operated by ASAP Semiconductor, we have an inventory of over six billion parts, including NSN Parts 330517-001, CY7C161A-25DBM, CY7C161A-25DBM, CY7C161A-25DBM, CY7C161A-45DMB. ASAP is dedicated to streamlining the parts procurement process for our customers, with dedicated account managers ready to solve procurement issues that they face. Each NSN 5962-01-359-0333 part of Microcircuit Memory we ship goes through numerous quality checks and inspections, to ensure we sell only the highest-quality parts. Ready to start? Then submit a Request for Quote from this page today.
| Alternative NSN: 5962-01-359-0333 |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013590333 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Information And Electronic Systems Integration I, Cypress Semiconductor Inc, Performance Semiconductor Corp, Pyramid Semiconductor Corp |
Part Number's List for NSN 5962-01-359-0333, 5962013590333
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 330517-001 | bae systems information and electronic systems integration i | microcircuit memory | Avl | RFQ |
| CY7C161A-25DBM | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| CY7C161A-25DBM | performance semiconductor corp | microcircuit memory | Avl | RFQ |
| CY7C161A-25DBM | pyramid semiconductor corp | microcircuit memory | Avl | RFQ |
| CY7C161A-45DMB | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| P4C1981-25CMB | pyramid semiconductor corp | microcircuit memory | Avl | RFQ |
| P4C1981-25CMB M0296 | pyramid semiconductor corp | microcircuit memory | Avl | RFQ |
| P4C1981-25DMB | performance semiconductor corp | microcircuit memory | Avl | RFQ |
Product Characteristics of NSN 5962013590333
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND PROGRAMMED AND MONOLITHIC |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING385 0 MILLIWATTS |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN21 INPUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
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